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[Core Information 04.06] IGBT supply and demand balance is expected, TSMC was cut by major customers  (2023/4/6 14:09:36)
1. Forec: IGBT may reach the balance between supply and demand in Q3 this year

According to the DIGITIMES asia survey, although the shortage of automotive IC is generally alleviated, the demand for power semiconductor devices is still large. DIGITIMES Research Analyst David Ma said the IGBT is likely to balance supply and demand in the third quarter of 2023.

2. TSMC's multiple customers intensified in the second quarter, with expected revenue turning down

According to kk Innovation Board Daily, citing Taiwan, China Electronics Times, TSMC's big customers Mediatek and Apple increased in the second quarter, while Nvidia, benefiting from the ChatGPT boom, also did not increase orders at TSMC in the second half of the year due to their new orders.

TSMC's 16 / 12nm capacity utilization rate dropped from nearly 80% of Q1 to 50% of Q2, while the expected orders from Intel and Nvidia were not as expected. The market is estimated that TSMC's second quarter revenue will continue to fall, and in the second half of the year, although the launch of iPhone new machine, and the annual rise of 6% OEM price support, but other big customers turn conservative, the annual revenue force to fight a small growth target is not low.

3. South Korea's semiconductor production fell 17.1% in February from the previous month

South Korea's semiconductor production fell 17.1 percent in February from the previous month, the biggest drop in more than 14 years, the Statistics Office said on Friday, IT Home reported.

Global demand for memory chips has weakened since the second half of last year, and production of system semiconductor has declined recently, South Korea's Statistics office said. South Korea's economy faces greater difficulties amid reduced global demand for chips, already showing negative growth last quarter.

4. Kai Xia and Western Digital jointly announced the 218-layer NAND flash memory technical details

According to Fast Technology, Western Digital and Kai Xia jointly announced some technical details of the next generation of 3D NAND flash memory, this time stacked to 218 layers. The new flash memory consists of four planes, applying advanced wafer bond and lateral contraction technology, and achieving a balance in lateral contraction and longitudinal contraction. The storage density is increased by more than 50% compared with the previous generation, reaching 1 Tb.

It is worth mentioning that Western Digital and Kai Xia developed a new CBA technology, that is, CMOS is directly bonded on the array. Each CMOS wafer and unit array wafer are manufactured independently using the most suitable technology, and then bonded together, thus greatly improving the storage density and I / O speed. This technology has a similar look to the Yangtze River storage crystal stack Xtacing 3.0 technology.




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